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| BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.18 g Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Coll. current - Kollektor-Spitzenstrom Base current - Basisstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open B shorted C open - VCE0 - VCES - VEB0 Ptot - IC - ICM - IB Tj TS Grenzwerte (TA = 25/C) BC 327 45 V 50 V 5V 625 mW 1) 800 mA 1A 100 mA 150/C - 65...+ 150/C BC 328 25 V 30 V Characteristics, Tj = 25/C Min. DC current gain - Kollektor-Basis-Stromverhaltnis Group -16 - VCE = 1 V, - IC = 100 mA Group -25 Group -40 Group -16 - VCE = 1 V, - IC = 300 mA Group -25 Group -40 hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 Kennwerte, Tj = 25/C Typ. 160 250 400 130 200 320 Max. 250 400 630 - - - 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 2 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter cutoff current - Kollektorreststrom - VCE = 45 V - VCE = 25 V - VCE = 45 V, Tj = 125/C - VCE = 25 V, Tj = 125/C BC 327 BC 328 BC 327 BC 328 - ICES - ICES - ICES - ICES - - - - BC 327 / BC 328 Kennwerte (Tj = 25/C) Typ. 2 nA 2 nA - - Max. 100 nA 100 nA 10 :A 10 :A Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung - IC = 10 mA - IC = 0.1 mA Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung - IE = 0.1 mA - IC = 500 mA, - IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung - VCE = 1 V, - IC = 300 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz fT CCB0 - - RthA 100 MHz 12 pF - - 200 K/W 1) BC 337 / BC 338 Collector-Base Capacitance - Kollektor-Basis-Kapazitat Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren - VBE - - 1.2 V - V(BR)EB0 - VCEsat 5V - - - - 0.7 V Collector saturation volt. - Kollektor-Sattigungsspannung BC 327 BC 328 BC 327 BC 328 - V(BR)CES - V(BR)CES - V(BR)CES - V(BR)CES 20 V 45 V 30 V 50 V - - - - - - - - Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ BC 327-16 BC 328-16 BC 327-25 BC 328-25 BC327-40 BC328-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 3 |
Price & Availability of BC327-16
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